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| IS654A IS655A 3mm DIA. MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 4.0 DESCRIPTION The IS654A ( Gallium Arsenide Emitting Diode ) and the IS655A ( NPN Silicon Photo Transistor ) are a mechanically and spectrally matched emitter detector end looking pair. FEATURES l T-1 standard 3mm DIA. l Detector has dark plastic package for visible light cut out l LED has high output, Radiant Intensity :IE = 2mW/sr min. at IF = 20mA l All electrical parameters are 100% tested APPLICATIONS l Floppy disk drives l Infrared applied systems l VCRs, Video camera l Optoelectronic switches ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -40C to + 85C Operating Temperature -25C to + 85C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 50mW 60mA 5V 90mW 3.0 2 1 5.3 1.0 2.6 1.5 12.7min. 1.0 min. 1.5 max 1 IS654A - Anode 1 2 - Cathode 2 2 IS655A - Emitter 1 2 1 - Collector ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92102-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER IS654A Emitter Forward Voltage (VF) Reverse Current (IR) Radiant Flux (IE) Peak Emission Wavelength Spectrum Radiation Bandwidth Beam Emission Angle Collector-emitter Breakdown (BVCEO) ( Note 1 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) MIN TYP MAX UNITS 1.2 1.5 940 50 20 30 1.6 100 V A mW/sr nm nm deg. V TEST CONDITION IF = 20mA VR = 5V IF = 40mA IF = 40mA IF = 40mA IS655A Detector IC = 1mA Ee = 0mW/cm2 IE = 100A Ee = 0mW/cm2 VCE = 10V Ee = 0mW/cm2 5V VCE Ee = 1mW/cm2 IC = 0.5mA Ee = 0.5mW/cm2 VCC= 20V, IC= 1mA, RL = 1k IF = 40mA 5 100 V nA On-State Collector Current IC ( ON ) Collector-emitter Saturation Voltage VCE(SAT) Rise Time Fall Time tr tf 1 mA 0.4 V s s 10 8 940 20 40 35 Peak Sensitivity Wavelength Beam Acceptance Angle Note 1 nm deg. Special Selections are available on request. Please consult the factory. 7/12/00 DB92102-AAS/A2 Forward Current vs. Ambient Temperature 80 70 Forward current I F (mA) 60 50 40 30 20 10 0 -25 0 25 50 75 100 Ambient temperature TA ( C ) Spectral Distribution 1.0 Rise and fall time tr, tf ( s) 100 90 80 70 60 50 40 30 20 10 0 840 940 Wavelength (nm) 1040 0 0 Relative radiant intensity 125 Collector power dissipation P C (mW) 60 50 40 30 20 10 0 -25 Collector Power Dissipation vs. Ambient Temperature 0 25 50 75 100 Ambient temperature TA ( C ) Rise and Fall Time vs. Load Resistance VCC = 20V IC = 1mA TA = 25C 125 tr tf 0.5 1 2 3 4 5 6 7 8 9 10 Load resistance RL (k) Relative Collector Current vs. Irradiance 5.0 VCE = 5V Relative Radiant Intensity vs. Forward Current 2.5 2.0 Relative collector current 0 20 40 60 80 100 Relative radiant intensity 4.0 1.5 3.0 1.0 0.5 0 Forward current IF (mA) 2.0 1.0 0 0 1 2 3 4 2 Irradiance Ee ( mW/cm ) 5 7/12/00 DB92102-AAS/A2 |
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